Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide.

نویسندگان

  • Aitor V Velasco
  • María L Calvo
  • Pavel Cheben
  • Alejandro Ortega-Moñux
  • Jens H Schmid
  • Carlos Alonso Ramos
  • Iñigo Molina Fernandez
  • Jean Lapointe
  • Martin Vachon
  • Siegfried Janz
  • Dan-Xia Xu
چکیده

The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.

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عنوان ژورنال:
  • Optics letters

دوره 37 3  شماره 

صفحات  -

تاریخ انتشار 2012